Published January 21, 2008
| Version v1
Journal article
Microstructure and electrical properties of p-type phosphorus-doped ZnO films
Creators
- 1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States)
- 2. IMRA America, Inc., Ann Arbor, MI 48105 (United States)
Description
The microscopic defects and their effects on the electrical properties of phosphorus-doped ZnO films epitaxially grown on (0 0 0 1) sapphire and ZnO substrates by pulsed laser deposition are studied. While threading dislocations were observed only in heteroepitaxial films, a high density of partial dislocations associated with interstitial dislocation loops was observed in films grown on both substrates. These dislocations provide sinks to quench native donors and favour the injection of zinc vacancies to form acceptor-complex defects, thus leading to p-type conductivity
Additional details
Identifiers
- DOI
- 10.1088/0022-3727/41/2/025103;
- PII
- S0022-3727(08)64147-9;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 41
- Journal Issue
- 2
- Journal Page Range
- p. 025103
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39039743
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DISLOCATIONS; DOPED MATERIALS; ELECTRICAL PROPERTIES; ENERGY BEAM DEPOSITION; EPITAXY; FILMS; INTERSTITIALS; LASER RADIATION; MICROSTRUCTURE; PHOSPHORUS; PULSED IRRADIATION; SAPPHIRE; SUBSTRATES; VACANCIES; ZINC; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CORUNDUM; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DEPOSITION; ELECTROMAGNETIC RADIATION; ELEMENTS; IRRADIATION; LINE DEFECTS; MATERIALS; METALS; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATIONS; SURFACE COATING; ZINC COMPOUNDS