Published June 2001
| Version v1
Journal article
Polycrystalline films of gallium nitride grown by magnetron sputtering
Creators
- 1. Institute of Physical Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 117915 (Russian Federation)
Description
Using radio-frequency magnetron sputtering, polycrystalline GaN films were fabricated on Si and polycrystalline Al2O3 substrates. When applied during fabrication, the negative bias increased the degree of crystallinity of the film
Additional details
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 35
- Journal Issue
- 6
- Journal Page Range
- p. 688-689
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35050086
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- ALUMINIUM OXIDES; CRYSTAL STRUCTURE; DEPOSITION; EXPERIMENTAL DATA; FABRICATION; FILMS; GALLIUM NITRIDES; GRAIN SIZE; MAGNETRONS; POLYCRYSTALS; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING; X-RAY DIFFRACTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTALS; DATA; DIFFRACTION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; INFORMATION; MATERIALS; MICROSTRUCTURE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SCATTERING; SEMIMETALS; SIZE
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 35, 718-719 (No. 6, 2001); (c) 2001 MAIK ''Nauka / Interperiodica''.