Published November 2, 2015
| Version v1
Journal article
Two-color detection with charge sensitive infrared phototransistors
- 1. Institute of Industrial Science, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153-8505 (Japan)
- 2. National Institute of Information and Communications Technology (NICT), 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)
- 3. Department of Basic Science, The University of Tokyo, Komaba 3-8-1, Meguro-ku, Tokyo 153-8902 (Japan)
Description
Highly sensitive two-color detection is demonstrated at wavelengths of 9 μm and 14.5 μm by using a charge sensitive infrared phototransistor fabricated in a triple GaAs/AlGaAs quantum well (QW) crystal. Two differently thick QWs (7 nm- and 9 nm-thicknesses) serve as photosensitive floating gates for the respective wavelengths via intersubband excitation: The excitation in the QWs is sensed by a third QW, which works as a conducting source-drain channel in the photosensitive transistor. The two spectral bands of detection are shown to be controlled by front-gate biasing, providing a hint for implementing voltage tunable ultra-highly sensitive detectors
Additional details
Identifiers
- DOI
- 10.1063/1.4935256;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 107
- Journal Issue
- 18
- Journal Page Range
- p. 182106-182106.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47055977
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM ARSENIDES; COLOR; CRYSTALS; DETECTION; ELECTRIC POTENTIAL; EXCITATION; GALLIUM ARSENIDES; PHOTOTRANSISTORS; QUANTUM WELLS; THICKNESS; WAVELENGTHS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DIMENSIONS; ENERGY-LEVEL TRANSITIONS; GALLIUM COMPOUNDS; NANOSTRUCTURES; OPTICAL PROPERTIES; ORGANOLEPTIC PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC