Published October 2000
| Version v1
Journal article
A verification of the applicability of the monovalent-defect model to the description of properties of the vacancy-oxygen complex in silicon
Creators
- 1. Belarussian State University, ul. Leningradskaya 14, Minsk, 220080 (Belarus)
Description
Temperature dependences of the charge-carrier concentration in Czochralski-grown n-Si crystals irradiated with 60Co gamma-quanta are studied. The applicability of a model of the monovalent defect with a level at about Ec - 0.17 eV to the description of the A-center properties in n-Si crystals is analyzed. It is shown that the model is not consistent with available experimental data. It is suggested that the A-center introduces two levels into the upper half of the band gap: an acceptor level in the vicinity of Ec - 0.16 eV and a donor level near Ec - 0.20 eV. This assumption is consistent with the data obtained by magnetic spectroscopy
Additional details
Identifiers
- DOI
- 10.1134/1.1317565;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 34
- Journal Issue
- 10
- Journal Page Range
- p. 1112-1115
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051861
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- CRYSTAL DEFECTS; CZOCHRALSKI METHOD; GAMMA RADIATION; N-TYPE CONDUCTORS; OXYGEN; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; THEORETICAL DATA; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DATA; ELECTROMAGNETIC RADIATION; ELEMENTS; INFORMATION; IONIZING RADIATIONS; MATERIALS; NONMETALS; NUMERICAL DATA; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 1162-1165 (No. 10, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.