Published October 2000 | Version v1
Journal article

A verification of the applicability of the monovalent-defect model to the description of properties of the vacancy-oxygen complex in silicon

  • 1. Belarussian State University, ul. Leningradskaya 14, Minsk, 220080 (Belarus)

Description

Temperature dependences of the charge-carrier concentration in Czochralski-grown n-Si crystals irradiated with 60Co gamma-quanta are studied. The applicability of a model of the monovalent defect with a level at about Ec - 0.17 eV to the description of the A-center properties in n-Si crystals is analyzed. It is shown that the model is not consistent with available experimental data. It is suggested that the A-center introduces two levels into the upper half of the band gap: an acceptor level in the vicinity of Ec - 0.16 eV and a donor level near Ec - 0.20 eV. This assumption is consistent with the data obtained by magnetic spectroscopy

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
34
Journal Issue
10
Journal Page Range
p. 1112-1115
ISSN
1063-7826
CODEN
SMICES

INIS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 1162-1165 (No. 10, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.