Published July 21, 2001
| Version v1
Journal article
The progress of SR study on the passivation of semiconductor surface in NSRL
Creators
Description
A new sulfur passivation method for GaAs by using CH3CSNH2 has been developed. Its passivation mechanics have been studied. The sulfide passivation layer can prevent deposited Mg and Fe from diffusing into or reacting with GaAs substrate. It is illustrated that sulfur passivation is beneficial to the enhancement of the magnetism of Fe overlayer on GaAs surface
Additional details
Identifiers
- PII
- S0168900201005745;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 467-468
- Journal Issue
- 1
- Journal Page Range
- p. 1202-1204
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Germany
- INIS RN
- 34013984
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMINES; DIFFUSION; GALLIUM ARSENIDES; IRON; LAYERS; MAGNESIUM; ORGANIC SULFUR COMPOUNDS; PASSIVATION; SEMICONDUCTOR MATERIALS; SUBSTRATES; SULFIDES; SURFACES
- Descriptors DEC
- ALKALINE EARTH METALS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; ELEMENTS; GALLIUM COMPOUNDS; MATERIALS; METALS; ORGANIC COMPOUNDS; PNICTIDES; SULFUR COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2001 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.