Electrostatic model of irradiation of energy gap and photoluminescence line shape of two-dimensional GaAs/AlGaAs layer at high excitation level

The electrostatic model for calculating the forbidden zone (gap) narrowing of the 2D semiconductor layer (quantum well), caused by the Coulomb interaction of the nonequilibrium charge carriers is developed. Only first energy levels of dimensional quantization for electrons and heavy holes are considered. The fluctuations of the charge carriers potential energy along 2D layer created by the electrons and holes themselves are for the first time accounted by calculating the exchange and correlation energies