Published September 2014
| Version v1
Journal article
Saturation of the leading spike growth in backward Raman amplifiers
Creators
- 1. Department of Astrophysical Sciences, Princeton University, Princeton, New Jersey 08540 (United States)
- 2. Department of Electrical Engineering, Technion Israel Institute of Technology, Haifa 32000 (Israel)
Description
Backward Raman amplification of laser pulses in plasmas can produce nearly relativistic unfocused output intensities and multi-exawatt powers in compact devices. The largest achievable intensity depends on which of major competitive processes set this limit. It is shown here that the relativistic electron nonlinearity can cause saturation of the leading amplified spike intensity before filamentation instabilities develop. A simple analytical model for the saturation, which supports numerical simulations, is suggested. The upper limit for the leading output spike unfocused intensity is calculated
Additional details
Identifiers
- DOI
- 10.1063/1.4896347;
- arXiv
- arXiv:1409.5195v1;
Publishing Information
- Journal Title
- Physics of Plasmas
- Journal Volume
- 21
- Journal Issue
- 9
- Journal Page Range
- p. 093112-093112.6
- ISSN
- 1070-664X
- CODEN
- PHPAEN
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46009615
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- AMPLIFICATION; AMPLIFIERS; COMPUTERIZED SIMULATION; ELECTRONS; LASERS; NONLINEAR PROBLEMS; PLASMA; PULSES; RELATIVISTIC RANGE; SATURATION
- Descriptors DEC
- ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ENERGY RANGE; EQUIPMENT; FERMIONS; LEPTONS; SIMULATION
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC