Published September 2014 | Version v1
Journal article

Saturation of the leading spike growth in backward Raman amplifiers

  • 1. Department of Astrophysical Sciences, Princeton University, Princeton, New Jersey 08540 (United States)
  • 2. Department of Electrical Engineering, Technion Israel Institute of Technology, Haifa 32000 (Israel)

Description

Backward Raman amplification of laser pulses in plasmas can produce nearly relativistic unfocused output intensities and multi-exawatt powers in compact devices. The largest achievable intensity depends on which of major competitive processes set this limit. It is shown here that the relativistic electron nonlinearity can cause saturation of the leading amplified spike intensity before filamentation instabilities develop. A simple analytical model for the saturation, which supports numerical simulations, is suggested. The upper limit for the leading output spike unfocused intensity is calculated

Additional details

Identifiers

Publishing Information

Journal Title
Physics of Plasmas
Journal Volume
21
Journal Issue
9
Journal Page Range
p. 093112-093112.6
ISSN
1070-664X
CODEN
PHPAEN

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46009615
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
AMPLIFICATION; AMPLIFIERS; COMPUTERIZED SIMULATION; ELECTRONS; LASERS; NONLINEAR PROBLEMS; PLASMA; PULSES; RELATIVISTIC RANGE; SATURATION
Descriptors DEC
ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ENERGY RANGE; EQUIPMENT; FERMIONS; LEPTONS; SIMULATION

Optional Information

Notes
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