Published 1988 | Version v1
Book Metadata-only

High-speed 1.3μ buried crescent injection lasers with semi-insulating current blocking layers

Creators

  • 1. Rockwell International Corp., Lightwave Systems Div., Dallas, TX (USA)
  • 2. Rockwell International Corp., Thousand Oaks, CA (USA). Science Center

Description

The fabrication and performance of high-speed and high-power 1.3-μm InGaAsP buried crescent lasers with semi-insulating (SI) current blocking layers are reported. These semi-insulation buried crescent (SIBC) lasers have a 3-dB modulation bandwidth of 11 GHz and cw output power of 42 mW/facet. This is the highest modulation bandwidth and output power yet reported for an InGaAsP laser with a semi-insulating blocking layer

Additional details

Publishing Information

Publisher
Optical Society of America.
Imprint Place
Washington, DC (USA)
ISBN
1-55752-022-4
Imprint Title
Proceedings of the optical fiber communication conference, 1988 technical digest series
Imprint Pagination
205 p.
Journal Page Range
p. 48.

Conference

Title
Optical fiber communication conference.
Dates
25-28 Jan 1988.
Place
New Orleans, LA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
21070751
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COMMUNICATIONS; FABRICATION; FREQUENCY MODULATION; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; MATERIALS; PERFORMANCE TESTING; SEMICONDUCTOR LASERS; THYRISTORS; USES
Descriptors DEC
AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; MODULATION; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS; TESTING

Optional Information

Notes
Imprint:Technical Paper WB3.
Secondary number(s)
CONF-8801175--.