Published January 2016 | Version v1
Journal article

Radiation defects parameters determination in n-Ge single crystals irradiated by high-energy electrons

  • 1. Luts'kij Natsyional'nij Yekhnyichnij Unyiversitet, Luts'k (Ukraine)
  • 2. Institute of Electron Physics, NASU, Uzhgorod (Ukraine)

Description

Hall effect for single crystals of n-Ge, irradiated by various streams of electrons with an energy of 10 MeV is investigated. Taking into account the experimental results, the energy spectrum of radiation defects is found and established their parameters. On the basis solutions of electroneutrality equations systems is shown that the created radiation defects correspond only two deep energy levels (E0 - 0,27) eV and (Eν + 0,27) eV. A slight change of energy position of these levels with irradiation dose increasing can be explained by internal mechanical stresses influence that arise in the germanium lattice of around created of radiation defects

Additional details

Additional titles

Original title (Ukrainian)
Viznachennya parametryiv radyiatsyijnikh defektyiv v opromyinenikh visokoenergetichnimi elektronami monokristalakh n-Ge

Publishing Information

Journal Title
Yaderna Fyizika ta Energetika
Journal Volume
17
Journal Issue
no.1
Journal Page Range
p. 47-52
ISSN
1818-331X