The development of a general three-dimensional surface under ion bombardment
Description
A general tree-dimensional theory of the development of surface topography during ion etching is presented together with the computational methods used for its visualization. Use of the techniques is illustrated using the example of an elliptical hummock under erosion using ion sources with both uniform and non-uniform ion-current distributions. The analysis is based on the method of characteristics, as in the theory of non-linear waves, and this has several advantages over existing two-dimensional methods including its suitability for numerical manipulation, its extension into three dimensions, and its ease of use with non-uniform beams. The use of the approach is also advantageous in two dimensions and this is considered separately in an Appendix. Areas of application of the methods include the use of ion etching in surface analysis and the microfabrication and micromachining of surface structures on certain electronic devices. The methods may also find application in explaining the effects of more macroscopic surface ablation methods and may also be applicable to the simulation of crystal growth in three dimensions. (author)
Additional details
Publishing Information
- Journal Title
- Philos. Mag. A
- Journal Volume
- 42
- Journal Issue
- 2
- Series
- Philos. Mag. A.
- Journal Page Range
- 235-248
- ISSN
- 0141-8610
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 11566915
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELLIPTICAL CONFIGURATION; EROSION; ETCHING; ION COLLISIONS; MATHEMATICAL MODELS; MICROSTRUCTURE; NUMERICAL SOLUTION; SURFACES; THREE-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- COLLISIONS; CONFIGURATION; CRYSTAL STRUCTURE; SURFACE FINISHING