Surface compositional profiles of self-assembled InAs/GaAs quantum rings
Creators
- 1. S3 INFM-CNR and Universita di Modena e Reggio Emilia, Via Campi 213/A, 41100 Modena (Italy)
- 2. NEST INFM-CNR and Scuola Normale Superiore, I-56126 Pisa (Italy)
- 3. Laboratorio Nazionale TASC INFM-CNR, I-34012 Trieste (Italy)
- 4. Sincrotrone Trieste S.C.p.A., I-34012 Trieste (Italy)
Description
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both experimentally and theoretically. By using X-ray Photoemission Electron Microscopy (XPEEM) we obtain a 2D composition mapping of unburied rings, which can be directly related to the QR topography measured by Atomic Force Microscopy (AFM). Top-surface composition mapping allows us to obtain information on structures which cannot be directly accessed with cross-sectional studies since overgrowing the QRs with a thick GaAs film alters both their morphology and composition. The 2D surface maps reveal a non-uniform distribution across the rings with an In richer InGaAs alloy in the central hole regions. Elastic energy calculations via a Valence Force Field (VFF) approach show that, for a given shape of the rings and a fixed total number of Ga and In atoms, an In enrichment of the alloy in the central hole region, together with an In enrichment of the surface layers, leads to a lowering of the total strain energy.
Additional details
Identifiers
- DOI
- 10.1063/1.3295472;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1199
- Journal Issue
- 1
- Journal Page Range
- p. 3-4
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 29. international conference on the physics of semiconductors
- Dates
- 27 Jul - 1 Aug 2008
- Place
- Rio de Janeiro (Brazil)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41101866
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURES; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; STRAINS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; SECONDARY EMISSION; SPECTROSCOPY
Optional Information
- Notes
- (c) 2009 American Institute of Physics