Published January 4, 2010 | Version v1
Journal article

Surface compositional profiles of self-assembled InAs/GaAs quantum rings

  • 1. S3 INFM-CNR and Universita di Modena e Reggio Emilia, Via Campi 213/A, 41100 Modena (Italy)
  • 2. NEST INFM-CNR and Scuola Normale Superiore, I-56126 Pisa (Italy)
  • 3. Laboratorio Nazionale TASC INFM-CNR, I-34012 Trieste (Italy)
  • 4. Sincrotrone Trieste S.C.p.A., I-34012 Trieste (Italy)

Description

The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both experimentally and theoretically. By using X-ray Photoemission Electron Microscopy (XPEEM) we obtain a 2D composition mapping of unburied rings, which can be directly related to the QR topography measured by Atomic Force Microscopy (AFM). Top-surface composition mapping allows us to obtain information on structures which cannot be directly accessed with cross-sectional studies since overgrowing the QRs with a thick GaAs film alters both their morphology and composition. The 2D surface maps reveal a non-uniform distribution across the rings with an In richer InGaAs alloy in the central hole regions. Elastic energy calculations via a Valence Force Field (VFF) approach show that, for a given shape of the rings and a fixed total number of Ga and In atoms, an In enrichment of the alloy in the central hole region, together with an In enrichment of the surface layers, leads to a lowering of the total strain energy.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1199
Journal Issue
1
Journal Page Range
p. 3-4
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
29. international conference on the physics of semiconductors
Dates
27 Jul - 1 Aug 2008
Place
Rio de Janeiro (Brazil)

Optional Information

Notes
(c) 2009 American Institute of Physics