Published July 1988
| Version v1
Journal article
Light absorption in disordered semiconductors with a random coulomb-type field
Creators
Description
A method is proposed for the formulation of an asymptotic series for the light absorption coefficient in disordered semiconductors with a random field of the Coulomb type. It is shown that the series is obtained by expanding the exponent of an exponential function in powers of a parameter proportional to (Eg - ℎω)-1/3, where Eg is the band gap of the semiconductor, and ℎω is the photon energy. The first three terms of the series are calculated in explicit form
Additional details
Publishing Information
- Journal Title
- Soviet Physics Journal (English Translation)
- Journal Volume
- 31
- Journal Issue
- 1
- Series
- Sov. Phys. J. (Engl. Transl.).
- Journal Page Range
- 25-29
- ISSN
- 0038-5697
- CODEN
- SOPJA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20084116
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- ATTENUATION; BAND THEORY; CORRELATION FUNCTIONS; COULOMB FIELD; DENSITY MATRIX; ENERGY GAP; ENERGY-LEVEL TRANSITIONS; EXCITONS; FLUCTUATIONS; GROUND STATES; INTEGRALS; ORDER PARAMETERS; PERTURBATION THEORY; PHOTONS; QUANTUM MECHANICS; SEMICONDUCTOR MATERIALS; WAVE FUNCTIONS
- Descriptors DEC
- BOSONS; ELECTRIC FIELDS; ELEMENTARY PARTICLES; ENERGY LEVELS; FUNCTIONS; MASSLESS PARTICLES; MATERIALS; MATRICES; MECHANICS; QUASI PARTICLES; VARIATIONS
Optional Information
- Notes
- Translated from Izv. Vyssh. Uchebn. Zaved., Fiz.; 31: No. 1, 28-32(Jan 1987). Cover-to-cover translation of Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika (USSR).