Published July 2018 | Version v1
Journal article

Simple Models of Lateral Heterostructures

  • 1. Ioffe Institute (Russian Federation)

Description

General analytical expressions for densities of states of a lateral heterostructure, formed by the contact of two square semi-infinite lattices with single-band and two-band spectra, were obtained in the tight-binding approximation by the Green's function method. The semi-elliptical density of states was used for numerical estimates, and the model of two interacting dimers was proposed to estimate the charge transfer. Application of this approach to description of lateral epitaxial and graphene-like heterostructures is discussed.

Additional details

Identifiers

Publishing Information

Journal Title
Physics of the Solid State
Journal Volume
60
Journal Issue
7
Journal Page Range
p. 1405-1412
ISSN
1063-7834

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
50014287
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
APPROXIMATIONS; CHARGE TRANSPORT; DENSITY OF STATES; EPITAXY; GRAPHENE; GREEN FUNCTION; NUMERICAL ANALYSIS; SIMULATION; SPECTRA
Descriptors DEC
CALCULATION METHODS; CARBON; CRYSTAL GROWTH METHODS; ELEMENTS; FUNCTIONS; MATHEMATICS; NONMETALS

Optional Information

Copyright
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