Published 2003
| Version v1
Journal article
Optical processes in silicon and microelectronic structures based thereon upon interaction with high-energy radiation
- 1. STC RI of Concern 'Institute for Single Crystals', Kharkov (Ukraine)
- 2. V.V.Dokuchaev Agrarian University, Kharkov (Ukraine)
- 3. Ukrainian National Academy of Communications, Odessa (Ukraine)
Description
Results of technical studies are presented on formation of light fluxes in silicon and integral structures based thereon. Effects of these light fluxes upon electric parameters of planar triode structures of integral circuits are considered. It has been shown that under irradiation by high-energy particles consumed and leakage currents of integral circuit are increased. Ways to decrease these effects are proposed
Additional details
Publishing Information
- Journal Title
- Voprosy Atomnoj Nauki i Tekhniki. Fizika Radiatsionnykh Povrezhdenij i Radiatsionnoe Materialovedenie
- Journal Issue
- no.3/83/
- Journal Page Range
- p. 154-157
- ISSN
- 0134-5400
- CODEN
- VAFMDP
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 35031831
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALPHA PARTICLES; OPTICAL PROPERTIES; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; IONIZING RADIATIONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMIMETALS