Channeling analysis of defects in InSb single crystals after implantation of Be ions

The radiation damage resulting in InSb due to the implantation of Be ions at energies between 50 and 200 keV was studied by means of Rutherford back-scattering and channeling. The radiation dose varied from 5 x 1013 to 2 x 1016 ions/cm2. No complete amorphization, increased oxidation, swelling, colour or texture changes of the implanted surfaces were noticed. Some crystals that were implanted at room temperature with a dose of 1 x 1016 Be+/cm2 at an energy of 100 keV were isochronally annealed. Other crystals were implanted with the same dose and energy, but at elevated substrate temperatures. In both cases the temperature ranged between room temperature and temperatures just below the melting point of InSb. Although a great amount of the radiation damage could be annealed in this temperature interval, the remaining damage, after annealing at temperatures just below the melting point, was still very high. Pulsed laser and electron beams were also used to anneal radiation damage in InSb crystals that were implanted at room temperature with Be ions at doses between 5 x 1015 and 2 x 1016 ions/cm2. Because of a non-linear dependence between the radiation damage and the energy of the implanted ion, crystals that were implanted at 100 and 200 keV were examined for each dose. Pulsed electron beam annealing was more effective in reordering ion-damaged crystals than pulsed laser beam annealing, isochronal thermal annealing or implantation at elevated substrate temperatures. For implantation at low Be doses conventional furnace annealing seems to be the most suitable method. 43 figs., 2 tabs., 154 refs