Published April 1, 2018 | Version v1
Journal article

SrFe1−xMoxO2+δ: parasitic ferromagnetism in an infinite-layer iron oxide with defect structures induced by interlayer oxygen

  • 1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026 (China)
  • 2. Instrumental Analysis Center, Hefei University of Technology, Hefei, Anhui 230009 (China)

Description

The recent discovered compound SrFeO2 is an infinite-layer-structure iron oxide with unusual square-planar coordination of Fe2+ ions. In this study, SrFe1−xMoxO2+δ (x < 0.12) is obtained by crystal transformation from SrFe1−xMoxO3−δ perovskite via low-temperature (≤380 °C) topotactic reduction. The parasitic ferromagnetism of the compound and its relationship to the defect structures are investigated. It is found that substitution of high-valent Mo6+ for Fe2+ results in excess oxygen anions O2− inserted at the interlayer sites for charge compensation, which further causes large atomic displacements along the c-axis. Due to the robust but flexible Fe-O-Fe framework, the samples are well crystallized within the ab-plane, but are significantly poorer crystallized along the c-axis. Defect structures including local lattice distortions and edge dislocations responsible for the lowered crystallinity are observed by high resolution transmission electron microscopy. Both the magnetic measurements and electron spin resonance spectra provide the evidence of a parasitic ferromagnetism (FM). The week FM interaction originated from the imperfect antiferromagnetic (AFM) ordering could be ascribed to the introduction of uncompensated magnetic moments due to substitution of Mo6+ (S = 0) for Fe2+ (S = 2) and the canted/frustrated spins resulted from defect structures. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/aabbed

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
5
Journal Issue
4
Journal Page Range
[9 p.]
ISSN
2053-1591