Coupling of photonic crystal cavity and interlayer exciton in heterobilayer of transition metal dichalcogenides
Creators
- 1. Department of Physics, University of Washington, Seattle, Washington (United States)
- 2. Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington (United States)
- 3. Department of Physics, Humboldt University, D-12489 Berlin (Germany)
- 4. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee (United States)
- 5. Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong (China)
Description
The advent of van der Waals heterostructures marks the emergence of a new class of synthetic materials with novel properties that are unattainable in their constituent materials. The 2D architecture of these layered materials makes them naturally suited for integration with a wide variety of planar nanophotonic cavities for next-generation low-power optoelectronic devices and explorations of fundamental physical effects in these new systems. Here, we report the coupling of the interlayer exciton in a transition metal dichalcogenide heterobilayer with a gallium phosphide photonic crystal defect cavity. The exciton-cavity coupling is found to be in the weak regime, resulting in ~15-fold increase in the photoluminescence intensity for interlayer exciton in resonance with the cavity. Simulation results suggest that the increased intensity stems from a Purcell enhancement of ~60. The order of magnitude enhancement of the photoluminescence yield offsets the low oscillator strength of the interlayer exciton, adding a new tool for probing the underlying physics of this excitonic system. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1583/ab597dAdditional details
Identifiers
Publishing Information
- Journal Title
- 2D Materials
- Journal Volume
- 7
- Journal Issue
- 1
- Journal Page Range
- [7 p.]
- ISSN
- 2053-1583
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52060737
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- COUPLING; CRYSTAL DEFECTS; CRYSTALS; EXCITONS; GALLIUM; GALLIUM PHOSPHIDES; LAYERS; OPTOELECTRONIC DEVICES; OSCILLATOR STRENGTHS; PHOTOLUMINESCENCE; SIMULATION; SYNTHETIC MATERIALS; TRANSITION ELEMENTS; VAN DER WAALS FORCES
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTRONIC EQUIPMENT; ELEMENTS; EMISSION; EQUIPMENT; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; METALS; OPTICAL EQUIPMENT; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; TRANSDUCERS