Published January 1, 2020 | Version v1
Journal article

Coupling of photonic crystal cavity and interlayer exciton in heterobilayer of transition metal dichalcogenides

  • 1. Department of Physics, University of Washington, Seattle, Washington (United States)
  • 2. Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington (United States)
  • 3. Department of Physics, Humboldt University, D-12489 Berlin (Germany)
  • 4. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee (United States)
  • 5. Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong (China)

Description

The advent of van der Waals heterostructures marks the emergence of a new class of synthetic materials with novel properties that are unattainable in their constituent materials. The 2D architecture of these layered materials makes them naturally suited for integration with a wide variety of planar nanophotonic cavities for next-generation low-power optoelectronic devices and explorations of fundamental physical effects in these new systems. Here, we report the coupling of the interlayer exciton in a transition metal dichalcogenide heterobilayer with a gallium phosphide photonic crystal defect cavity. The exciton-cavity coupling is found to be in the weak regime, resulting in ~15-fold increase in the photoluminescence intensity for interlayer exciton in resonance with the cavity. Simulation results suggest that the increased intensity stems from a Purcell enhancement of ~60. The order of magnitude enhancement of the photoluminescence yield offsets the low oscillator strength of the interlayer exciton, adding a new tool for probing the underlying physics of this excitonic system. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1583/ab597d

Additional details

Identifiers

Publishing Information

Journal Title
2D Materials
Journal Volume
7
Journal Issue
1
Journal Page Range
[7 p.]
ISSN
2053-1583