Published June 2018
| Version v1
Journal article
Monte Carlo study of impact ionization in n-type InAs induced by intense ultrashort terahertz pulses
- 1. Center fort Physical Sciences and Technology (Lithuania)
Description
Electron impact ionization induced in n-type InAs by single-cycle pulses of picosecond and subpicosecond duration has been investigated by Monte Carlo method. It is established that the rate of generation of electron–hole pairs decreases with the decrease of the pulse duration. The impact ionization threshold field is found to depend linearly on frequency for the fields oscillating at frequencies much higher than reciprocal momentum relaxation time. Good agreement between calculations and available experimental data has been obtained.
Additional details
Identifiers
Publishing Information
- Journal Title
- Optical and Quantum Electronics
- Journal Volume
- 50
- Journal Issue
- 6
- Journal Page Range
- p. 1-9
- ISSN
- 0306-8919
- CODEN
- OQELDI
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51021469
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- COMPUTERIZED SIMULATION; ELECTRON-HOLE COUPLING; ELECTRONS; EXPERIMENTAL DATA; INDIUM ARSENIDES; IONIZATION; MONTE CARLO METHOD; N-TYPE CONDUCTORS; PULSES; RELAXATION TIME; THZ RANGE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CALCULATION METHODS; COUPLING; DATA; ELEMENTARY PARTICLES; FERMIONS; FREQUENCY RANGE; INDIUM COMPOUNDS; INFORMATION; LEPTONS; MATERIALS; NUMERICAL DATA; PNICTIDES; SEMICONDUCTOR MATERIALS; SIMULATION
Optional Information
- Copyright
- Copyright (c) 2018 Springer Science+Business Media, LLC, part of Springer Nature
- Notes
- http://www.springer-ny.com