Annealing Temperature Dependence on the Physicochemical Properties of Copper Oxide Thin Films
Creators
- 1. Pukyong National University, Busan (Korea, Republic of)
Description
We report the results of the characterization of Cu oxide thin films deposited by radio frequency (r.f.) magnetron sputtering at different annealing temperatures. The deposited Cu oxide thin films were investigated by scanning electron microscopy, spectroscopic ellipsometry, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and contact angle measurements. The thickness of the films was about 180 nm and the monoclinic CuO phase was detected. The CuO2 and Cu(OH)2 phases were grown as amorphous phase and the ratio of the three phases were independent on the annealing temperature. The surface of Cu oxide films changed from hydrophilic to hydrophobic as the annealing temperature increased. This phenomenon is due to the increase of the surface roughness. The direct optical band gap was also obtained and laid in the range between 2.36 and 3.06 eV
Additional details
Publishing Information
- Journal Title
- Bulletin of the Korean Chemical Society
- Journal Volume
- 32
- Journal Issue
- 4
- Series
- 41 refs, 7 figs, 1 tab
- Journal Page Range
- p. 1331-1335
- ISSN
- 0253-2964
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 50081490
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL PROPERTIES; COPPER OXIDES; PHYSICAL PROPERTIES; SPUTTERING; SURFACES; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; DIFFRACTION; DIMENSIONS; FILMS; HEAT TREATMENTS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SCATTERING; TRANSITION ELEMENT COMPOUNDS