Published January 1990
| Version v1
Journal article
Ion beam analysis of edge effects in Al/M/Al stripes
Creators
- 1. Dept. of Physics, State Univ. of New York, Albany, NY (USA)
- 2. IBM East Fishkill, Hopewell Junction, NY (USA)
Description
Al/M/Al stripes (with M = Hf, Ti or Ti-W) having widths from 0.5 to 200 μm were annealed in N2 and H2 gas. The interdiffusion between layers and hydrogen diffusion in from edges were studied by RBS and nuclear reaction analysis. For Hf and Ti systems, rapid hydrogen diffusion in from the edge was observed. However, this hydrogen did not affect interdiffusion between layers. Al/Hf/Al samples showed an edge-enhanced diffusion, which was likely caused by reactive ion etching (RIE) during processing. For the Ti-W system, the edge diffusion was reduced in H2 during annealing. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research, Section B
- Journal Volume
- 45
- Journal Issue
- 1-4
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 123-125
- ISSN
- 0168-583X
- CODEN
- NIMBE
Conference
- Title
- 9. international conference on ion beam analysis (IBA-9).
- Dates
- 26-30 Jun 1989.
- Place
- Kingston (Canada).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 21068810
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ANNEALING; BACKSCATTERING; CONNECTORS; DIFFUSION; FABRICATION; HAFNIUM; HYDROGEN ADDITIONS; INTEGRATED CIRCUITS; ION BEAMS; MICROELECTRONIC CIRCUITS; NITROGEN; TITANIUM; TITANIUM ALLOYS; TUNGSTEN ALLOYS
- Descriptors DEC
- ALLOYS; BEAMS; CONDUCTOR DEVICES; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; METALS; NONMETALS; SCATTERING; TRANSITION ELEMENTS