A high precision high PSRR bandgap reference with thermal hysteresis protection
Creators
- 1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of the Ministry of Education, Institute of Microelectronics, Xidian University, Xi'an 710071 (China)
Description
To meet the accuracy requirement for the bandgap voltage reference by the increasing data conversion precision of integrated circuits, a high-order curvature-compensated bandgap voltage reference is presented employing the characteristic of bipolar transistor current gain exponentially changing with temperature variations. In addition, an over-temperature protection circuit with a thermal hysteresis function to prevent thermal oscillation is proposed. Based on the CSMC 0.5 μm 20 V BCD process, the designed circuit is implemented; the active die area is 0.17 x 0.20 mm2. Simulation and testing results show that the temperature coefficient is 13.7ppm/K with temperature ranging from -40 to 150 0C, the power supply rejection ratio is -98.2 dB, the line regulation is 0.3 mV/V, and the power consumption is only 0.38 mW. The proposed bandgap voltage reference has good characteristics such as small area, low power consumption, good temperature stability, high power supply rejection ratio, as well as low line regulation. This circuit can effectively prevent thermal oscillation and is suitable for on-chip voltage reference in high precision analog, digital and mixed systems. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/31/9/095010Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 31
- Journal Issue
- 9
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42071698
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ACCURACY; ELECTRIC POTENTIAL; HYSTERESIS; INTEGRATED CIRCUITS; TEMPERATURE COEFFICIENT; TRANSISTORS
- Descriptors DEC
- ELECTRONIC CIRCUITS; MICROELECTRONIC CIRCUITS; REACTIVITY COEFFICIENTS; SEMICONDUCTOR DEVICES