Published March 1981
| Version v1
Journal article
The influence of defect states on electronic structure of WO3
Creators
- 1. Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany, F.R.)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Der Einfluss von Defektzustaenden auf die elektronische Struktur von WO
Publishing Information
- Journal Title
- Verh. Dtsch. Phys. Ges.
- Journal Volume
- 16
- Journal Issue
- 3
- Series
- Verh. Dtsch. Phys. Ges.
- Journal Page Range
- 183
- ISSN
- 0420-0195
Conference
- Title
- Spring meeting of the technical committee on semiconductor physics.
- Dates
- 9 - 14 Mar 1981.
- Place
- Muenster, Germany, F.R.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 13657842
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; ELECTRON BEAMS; ELECTRONIC STRUCTURE; ION BEAMS; PHOTOEMISSION; RADIATION EFFECTS; TUNGSTEN OXIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CRYSTAL STRUCTURE; EMISSION; LEPTON BEAMS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; SECONDARY EMISSION; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Notes
- Published in summary form only.