Influence of SHI irradiation on the formation of buried SiC
Creators
- 1. Inter-University Accelerator Centre, Materials Science, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110 067 (India)
Description
Silicon carbide (SiC) precipitates buried in Si(1 0 0) substrates were synthesized by ion implantation of 50 keV and 150 keV C+ ions at different fluences. Two sets of samples were subsequently annealed at 850 deg. C and 1000 deg. C for 30 min. Fourier transform infrared (FTIR) spectroscopy studies and X-ray diffraction (XRD) analysis confirmed formation of β-SiC precipitates in the samples. Ion irradiation with 100 MeV Ag7+ ions at room temperature does not induce significant change in the precipitates. It could be interpreted from the FTIR observations that ion irradiation may induce nucleation in Si + C solution created by ion implantation of C in Si. Modifications induced by swift heavy ion irradiation are found to be dependent on implantation energy of C+ ions
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2007.04.213;
- PII
- S0168-583X(07)00981-0;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 260
- Journal Issue
- 2
- Journal Page Range
- p. 563-566
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39022782
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CARBON IONS; FOURIER TRANSFORM SPECTROMETERS; FOURIER TRANSFORMATION; HEAVY IONS; INFRARED SPECTRA; ION IMPLANTATION; IRRADIATION; KEV RANGE 10-100; KEV RANGE 100-1000; MEV RANGE; NUCLEATION; PRECIPITATION; SILICON CARBIDES; SPECTROSCOPY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; ENERGY RANGE; HEAT TREATMENTS; INTEGRAL TRANSFORMATIONS; IONS; KEV RANGE; MEASURING INSTRUMENTS; SCATTERING; SEPARATION PROCESSES; SILICON COMPOUNDS; SPECTRA; SPECTROMETERS; TEMPERATURE RANGE; TRANSFORMATIONS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.