Published November 1, 2010 | Version v1
Journal article Metadata-only

Study of the Stability of 3C-SiC Single Crystals Using High-Resolution Diffuse X-Ray Scattering

Creators

  • 1. Science des Procedes Ceramiques et de Traitements de Surface (SPCTS) CNRS UMR 6638, ENSCI, 47 avenue Albert Thomas 87065 Limoges Cedex (France)
  • 2. Laboratoire des Materiaux et du Genie Physique (LMGP) CNRS UMR 5628, Grenoble INP, Minatec, 3 parvis Louis Neel, BP 257, 38016 Grenoble Cedex 01 (France)

Description

The stability of (001)-oriented 3C silicon carbide crystals is studied by a method coupling high resolution x-ray diffraction and numerical simulations. The analysis of the diffuse scattering intensity distribution along selected directions in reciprocal space allows us to obtain qualitative and quantitative informations regarding the 3C-6H transition. Our latest results concerning the influence of the initial crystal quality (presence of defects) and of annealing time on the 3C-6H transition are presented in this article.

Additional details

Identifiers

DOI
10.1063/1.3518314;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1292
Journal Issue
1
Journal Page Range
p. 71-74
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
2010 wide bandgap cubic semiconductors - From growth to devices
Acronym
E-MRS Symposium F
Dates
8-10 Oct 2010
Place
Strasbourg (France)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42028794
Subject category
S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; DIFFUSE SCATTERING; MONOCRYSTALS; NANOSTRUCTURES; PHASE STABILITY; RESOLUTION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; X-RAY DIFFRACTION
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; HEAT TREATMENTS; MATERIALS; SCATTERING; SILICON COMPOUNDS; SIMULATION; STABILITY

Optional Information

Notes
(c) 2010 American Institute of Physics