Burstein-Moss effect and near-band-edge luminescence spectrum of highly doped indium arsenide

The shape of near-band-edge luminescence spectrum is studied and a quantitative analysis of the Burstein-Moss shift in the three band approximation of Kane's theory is carried out. It is shown experimentally that with increasing electron concentration the spectrum maximum is shifted towards the high-energy region up to 0.7 eV. At the high-energy side of spectrum a kink is observed, and at the low-energy side, an emission maximum at 0.39 to 0.40 eV. The calculations show that the spectrum shape may be described by indirect transitions: band-band and band-shallow acceptor. The narrowing of the optical band gap is accounted for a better agreement between the experimental and theoretical spectra. (author)