Published February 1987
| Version v1
Journal article
The influence of screening on the Auger coefficient of 1.3 μm InGaAsP lattice matched to InP
Description
The authors demonstrate numerically that calculations of the Auger coefficient of 1.3 μm InGaAsP are appreciably affected by the assumed screening parameters, expecially at low temperatures and high carrier densities. They also generalize earlier theories of Auger processes to prove that the screening length should be set to infinity in such calculations
Additional details
Publishing Information
- Journal Title
- IEEE J. Quantum Electron.
- Journal Volume
- QE-23
- Journal Issue
- 2
- Series
- IEEE J. Quantum Electron.
- Journal Page Range
- 168-170
- ISSN
- 0018-9197
- CODEN
- IEJQA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18055735
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AUGER EFFECT; CARRIER DENSITY; CRYSTAL LATTICES; FREQUENCY RANGE; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MATERIALS; NUMERICAL SOLUTION; SEMICONDUCTOR LASERS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS