Published January 2015
| Version v1
Journal article
A quantum dot asymmetric self-gated nanowire FET for high sensitive detection
Creators
- 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)
- 2. State Key Laboratory for Superlattices and microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083 (China)
Description
We present a novel device for weak light detection based on self-gated nanowire field effect structure with embedded quantum dots beside the nanowire current channel. The quantum dot with high localization energy will make the device work at high detecting temperature and the nano-channel structure will provide high photocurrent gain. Simulation has been done to optimize the structure, explain the working principle and electrical properties of the devices. The nonlinear current-voltage characteristics have been demonstrated at different temperatures. The responsivity of the device is proven to be more than 4.8 × 106A/W at 50 K
Additional details
Identifiers
- DOI
- 10.1063/1.4905787;
Publishing Information
- Journal Title
- AIP Advances
- Journal Volume
- 5
- Journal Issue
- 1
- Journal Page Range
- p. 017108-017108.6
- ISSN
- 2158-3226
- CODEN
- AAIDBI
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47023959
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DETECTION; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; EQUIPMENT; QUANTUM DOTS; SIMULATION
- Descriptors DEC
- NANOSTRUCTURES; PHYSICAL PROPERTIES
Optional Information
- Notes
- (c) 2015 Author(s)