Published August 13, 2006 | Version v1
Report

EFFECTS OF MATERIAL IMPROVEMENT ON CZT DETECTORS

Description

CZT material quality improvement has been achieved by optimizing the crystal growth process. N-type conductivity has been measured on as-grown, undoped, Cd0.9Zn0.1Te. Cd0.85Zn0.15Te crystals have been grown. for producing high resistivity CZT radiation detectors. The best FWHM of 57Co 122KeV spectrum was measured to be 3.7% and (μτ)e was 3 x 10-3 cm2V-1. The microscopic gamma ray response using a beam size of 10 (micro)m has been used to map the entire 4 mm x 4 mm detector. Several black spots indicating no signal responses were observed while all other areas showed an average of 65-70% collection efficiency. The black spots suggest that at those locations, the Te precipitates are larger than 10 (micro)m. Detailed microscopic infrared transmission measurement on the sample found that most Te precipitates have sizes of 4-6 (micro)m. Theoretical analysis of the results suggests that singly and doubly ionized TeCdVCd2 might be the shallow and deep donors previously assigned to TeCd by us

Additional details

Publishing Information

Imprint Pagination
9 p.
Report number
BNL--77018-2006-CP

Conference

Title
SPIE, HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS VIII
Dates
13-17 Aug 2006
Place
SAN DIEGO, CA (United States)

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
38007616
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
CDTE SEMICONDUCTOR DETECTORS; CRYSTAL GROWTH; EFFICIENCY; N-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS
Descriptors DEC
MATERIALS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS

Optional Information

Contract/Grant/Project number
NN2001050; AC02-98CH10886
Funding organization
DOE/NNSA (United States)