EFFECTS OF MATERIAL IMPROVEMENT ON CZT DETECTORS
Description
CZT material quality improvement has been achieved by optimizing the crystal growth process. N-type conductivity has been measured on as-grown, undoped, Cd0.9Zn0.1Te. Cd0.85Zn0.15Te crystals have been grown. for producing high resistivity CZT radiation detectors. The best FWHM of 57Co 122KeV spectrum was measured to be 3.7% and (μτ)e was 3 x 10-3 cm2V-1. The microscopic gamma ray response using a beam size of 10 (micro)m has been used to map the entire 4 mm x 4 mm detector. Several black spots indicating no signal responses were observed while all other areas showed an average of 65-70% collection efficiency. The black spots suggest that at those locations, the Te precipitates are larger than 10 (micro)m. Detailed microscopic infrared transmission measurement on the sample found that most Te precipitates have sizes of 4-6 (micro)m. Theoretical analysis of the results suggests that singly and doubly ionized TeCdVCd2 might be the shallow and deep donors previously assigned to TeCd by us
Additional details
Identifiers
Publishing Information
- Imprint Pagination
- 9 p.
- Report number
- BNL--77018-2006-CP
Conference
- Title
- SPIE, HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS VIII
- Dates
- 13-17 Aug 2006
- Place
- SAN DIEGO, CA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 38007616
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- CDTE SEMICONDUCTOR DETECTORS; CRYSTAL GROWTH; EFFICIENCY; N-TYPE CONDUCTORS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- MATERIALS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS
Optional Information
- Contract/Grant/Project number
- NN2001050; AC02-98CH10886
- Funding organization
- DOE/NNSA (United States)