Published April 2013 | Version v1
Journal article

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

  • 1. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 26 Politekhnicheskaya, 194021 St. Petersburg (Russian Federation)
  • 2. Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590 (United States)
  • 3. CREE Inc., 4600 Silicon Dr., Durham, NC 27703 (United States)

Description

Optical triggering of a high-voltage (12 kV class) 4H-SiC thyristor to a current Imax = 1300 A is demonstrated. An amplification step (pilot thyristor) and a mixed resistive-inductive load are used to reduce the current ramp dI/dt. The results obtained show that a decrease in the current density at the end of the first, fastest phase of the switch-on process can be achieved either by improving the homogeneity of the initially turned-on region or by introducing additional amplification steps. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/28/4/045016

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
28
Journal Issue
4
Journal Page Range
[3 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45013976
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CURRENT DENSITY; ELECTRIC POTENTIAL; SILICON CARBIDES
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; SILICON COMPOUNDS