Published April 2013
| Version v1
Journal article
High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor
- 1. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 26 Politekhnicheskaya, 194021 St. Petersburg (Russian Federation)
- 2. Department of Electrical, Computer, and Systems Engineering, CII 9017, Rensselaer Polytechnic Institute, Troy, NY 12180-3590 (United States)
- 3. CREE Inc., 4600 Silicon Dr., Durham, NC 27703 (United States)
Description
Optical triggering of a high-voltage (12 kV class) 4H-SiC thyristor to a current Imax = 1300 A is demonstrated. An amplification step (pilot thyristor) and a mixed resistive-inductive load are used to reduce the current ramp dI/dt. The results obtained show that a decrease in the current density at the end of the first, fastest phase of the switch-on process can be achieved either by improving the homogeneity of the initially turned-on region or by introducing additional amplification steps. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0268-1242/28/4/045016Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 28
- Journal Issue
- 4
- Journal Page Range
- [3 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45013976
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CURRENT DENSITY; ELECTRIC POTENTIAL; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; SILICON COMPOUNDS