Published December 4, 2013 | Version v1
Journal article

Effect of low transverse magnetic field on the confinement strength in a quasi-1D wire

  • 1. London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH (United Kingdom)
  • 2. London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, UK and Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  • 3. Cavendish Laboratory, J. J. Thomson Avenue, Cambridge CB3 OHE (United Kingdom)
  • 4. London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London WC1H 0AH, UK and Department of Electrical and Electronic Engineering, Torrington Place, London WC1E 7JE (United Kingdom)

Description

Transport measurements in a quasi-one dimensional (1D) quantum wire are reported in the presence of low transverse magnetic field. Differential conductance shows weak quantised plateaus when the 2D electrons are squeezed electrostatically. Application of a small transverse magnetic field (0.2T) enhances the overall degree of quantisation due to the formation of magneto-electric subbands. The results show the role of magnetic field to fine tune the confinement strength in low density wires when interaction gives rise to double row formation

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1566
Journal Issue
1
Journal Page Range
p. 245-246
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
31. international conference on the physics of semiconductors
Acronym
ICPS 2012
Dates
29 Jul - 3 Aug 2012
Place
Zurich (Switzerland)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45083019
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DENSITY; INTERACTIONS; MAGNETIC FIELDS; QUANTIZATION; QUANTUM WIRES
Descriptors DEC
NANOSTRUCTURES; PHYSICAL PROPERTIES

Optional Information

Notes
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