Shaping Semiconductor Laser Beam with One-Dimension Gradient-Index Lens
Description
This paper's main purpose is collimating shaping and coupling semi-conductor laser beam by one-dimension gradient-index lens with parabolic-index profiles along the direction of thickness has been fabricated by ion-exchanging process. Introduced the ray matrix equation of One-dimension gradient-index lens and formation process of parabolicindex profiles. Measured distribution constant of refraction √A in varied thickness.Using onedimension gradient-index lens with varied thickness replacing cylindrical lens collimating shaping and coupling semi-conductor laser beam. Using two perpendicular one-dimension gradient-index lens shaping laser beam by two direction.Maked a mini and new semiconductor laser coupler.Demonstrated a coupling efficiency of 80% which from semi-conductor laser beam into single-mode fiber
Availability note (English)
Available online at http://stacks.iop.org/1742-6596/48/785/jpconf6_48_149.pdf or at the Web site for the Journal of Physics. Conference Series (Online) (ISSN 1742-6596) http://www.iop.org/Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 48
- Journal Issue
- 1
- Journal Page Range
- p. 785-789
- ISSN
- 1742-6596
Conference
- Title
- International symposium on instrumentation science and technology
- Dates
- 8-12 Aug 2006
- Place
- Harbin (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38033726
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COUPLING; CYLINDRICAL CONFIGURATION; DISTRIBUTION FUNCTIONS; EFFICIENCY; FIBERS; INDEXES; ION EXCHANGE; LASER RADIATION; LENSES; REFRACTION; SEMICONDUCTOR LASERS
- Descriptors DEC
- CONFIGURATION; DOCUMENT TYPES; ELECTROMAGNETIC RADIATION; FUNCTIONS; LASERS; RADIATIONS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS