Synthesis of graphene on SiC substrate via Ni-silicidation reactions

In this work, the features of graphene layers are studied with the aim of preparing the thinnest layers possible. The graphene layers were prepared by the annealing of Ni/SiC structures. The main advantage of this process is a relatively low temperature compared with the method of graphene epitaxial growth on SiC and short annealing times compared with the chemical vapor deposition method. We prepared graphene layers from several Ni/SiC structures in which the Ni layer thickness ranged from 1 to 200 nm. The parameters of the annealing process (temperature, rate of temperature increase, annealing time) were modified during the experiments. The formed graphene layers were analyzed by means of Raman spectroscopy. From the spectra, the basic parameters of graphene, such as the number of carbon layers and crystallinity, were determined. The annealing of the Ni(200 nm)/SiC structure at 1080 °C for 10 s, produced graphene in the form of 3–4 carbon monolayers. The value was verified by X-ray Photoelectron Spectroscopy (XPS). Good agreement was achieved in the results obtained using Raman spectroscopy and XPS. - Highlights: ► Low temperature preparation of graphene by the annealing of Ni/SiC structures. ► Raman spectroscopy used for the analyzing of graphene layers. ► Optimal structure Ni(200)/SiC annealed at 1080 °C for 10 s. ► Graphene prepared in the form of 3–4 carbon monolayers.