Published March 2005 | Version v1
Journal article Metadata-only

Schottky contacts to InP

Creators

  • 1. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest 114, P. O. Box 49, 1525 Budapest (Hungary)
  • 2. Erciyes University, Faculty of Art and Science, Department of Physics, 38039 Kayseri (Turkey)
  • 3. Erciyes University, Yozgat Faculty of Art and Science, Department of Physics, Yozgat (Turkey)

Description

We report an experimental investigation of Au Schottky contacts prepared on both n-type and p-type InP. In particular, we have investigated in great details the effects of InP surface treatment on the current-voltage behaviour of n-type junctions. This included cleaning with HF:H2O and HCl:H2O solutions before metallization, investigatinging the effect of an air exposure and investigating the effect of the metal work function using Al and Sn metallizations as well. A best Schottky barrier height of 0.83 eV could be achieved using an HCl:H2O surface treatment. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200460479

Additional details

Identifiers

DOI
10.1002/pssc.200460479;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
2
Journal Issue
4
Journal Page Range
p. 1423-1427
ISSN
1610-1634

Conference

Title
7. international workshop on expert evaluation and control of compound semiconductor materials and technologies
Dates
1-4 Jun 2004
Place
Montpellier (France)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
36038943
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AQUEOUS SOLUTIONS; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; GOLD; HETEROJUNCTIONS; HYDROCHLORIC ACID; HYDROFLUORIC ACID; INDIUM PHOSPHIDES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SCHOTTKY EFFECT; SURFACE CLEANING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; WORK FUNCTIONS
Descriptors DEC
CHLORINE COMPOUNDS; CLEANING; DISPERSIONS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; FLUORINE COMPOUNDS; FUNCTIONS; HALOGEN COMPOUNDS; HOMOGENEOUS MIXTURES; HYDROGEN COMPOUNDS; INDIUM COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; MATERIALS; METALS; MIXTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SOLUTIONS; SURFACE FINISHING; TEMPERATURE RANGE; TRANSITION ELEMENTS

Optional Information

Notes
With 2 figs., 4 tabs., 26 refs.. SICI: 1610-1634(200503)2:4<1423::AID-PSSC200460479>3.0.TX;2-3