Published April 2008
| Version v1
Journal article
Interaction of cadmium vapor with the surface of CdxHg1-xTe layers during molecular beam epitaxial growth on GaAs substrates
- 1. SO RAN, Inst. Fiziki Poluprovodnikov, Novosibirsk (Russian Federation)
Description
The reactions of cadmium vapor with the surface of CdxHg1-xTe layers growing on (310) and (100) GaAs substrates have been studied. The results indicate that cadmium substitutes for mercury atoms in the surface layer. Diatomic tellurium molecules arriving at the (310) surface dissociate more rapidly in comparison with the (100) surface
Abstract (Russian)
Исследовано взаимодействие паров кадмия с поверхностью слоев CdxHg1-xTe, выращиваемых на подложках GaAs с ориентацией поверхностей (310) и (100). Установлено, что атомы кадмия на поверхности замещают атомы ртути. Показано, что на поверхности (310) происходит более быстрая диссоциация двухатомных молекул теллура из потока, чем на поверхности (100)Additional details
Additional titles
- Original title (Russian)
- Исследование взаимодействия паров кадмия с поверхностью слоев Cд
Publishing Information
- Journal Title
- Neorganicheskie Materialy
- Journal Volume
- 44
- Journal Issue
- 4
- Journal Page Range
- p. 431-435
- ISSN
- 0002-337X
- CODEN
- NEOMB8
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 39119785
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CADMIUM; CADMIUM TELLURIDES; CHEMICAL REACTION KINETICS; FILMS; LAYERS; MERCURY TELLURIDES; MILLER INDICES; MOLECULAR BEAM EPITAXY; SURFACES; VAPORS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; FLUIDS; GASES; KINETICS; MERCURY COMPOUNDS; METALS; REACTION KINETICS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- 4 refs., 5 figs.