Published August 25, 2005 | Version v1
Journal article

PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor

  • 1. Istituto di Chimica Inorganica e delle Superfici del C.N.R., Corso Stati Uniti 4, 35127 Padova (Italy)
  • 2. Istituto per lo Studio dei Materiali Nanostrutturati del C.N.R., Via Salaria Km. 29.3, 00016 Monterotondo (Italy)
  • 3. ICMAB/CSIC, Campus UAB, 08193 Bellaterra, Spain. Centro de Fisica Aplicada y Tecnologia Avanzada-UNAM A.P. 1-1010, Santiago de Queretaro, QRO, CP 76000 (Mexico)

Description

Boron nitride (BN) thin films have been successfully synthesised via low pressure plasma enhanced chemical vapour deposition (PECVD) by using boranedimethylamine, BH3NH(CH3)2, as a single source precursor in the temperature range 280-550 deg. C in a nitrogen-argon atmosphere. The plasma power was optimised with the aim of obtaining suitable cubic/hexagonal phase ratios. The annealing of the h-BN films at temperatures up to 1000 deg. C in a nitrogen atmosphere, at normal pressure, gave rise to a complete transformation into the cubic phase. FTIR measurements provided a suitable method for identifying the structure of BN films. UV-vis spectroscopy was carried out in order to investigate the optical behaviour of the films

Additional details

Identifiers

DOI
10.1016/j.electacta.2004.10.095;
PII
S0013-4686(05)00509-8;

Publishing Information

Journal Title
Electrochimica Acta
Journal Volume
50
Journal Issue
23
Journal Page Range
p. 4600-4604
ISSN
0013-4686
CODEN
ELCAAV

Conference

Title
Conference on nanotechnology and coatings for novel applications
Acronym
Euro Interfinish 2003
Dates
23-24 Oct 2003
Place
Praglia (Italy)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.