Si/Cr reactions with electron beam and excimer laser pulses

Si/Cr (65 and 130 nm) samples were irradiated with 25 keV - 50 ns e-beam pulses and with excimer laser (KrCl, 222 nm - 15 ns) pulses. The e-beam current fluences varied from 900 to 1200 A/cm2 and the laser light fluences from 0.3 to 1.0 J/cm2. Depending on the metal film thickness and the beam fluence, layers of different thickness of CrSi2 were observed with the RBS technique. The comparison of the RBS spectra with the temperature profiles obtained from computer calculations indicates that Si/Cr reaction starts when the interface temperature reaches the lowest eutectic temperature of the binary Si/Cr system. The silicide growth rate results of about 1 m/s