Published 1991 | Version v1
Book

Defects and high temperature electrical properties of Nd2-xCexCuO4-y

  • 1. Massachusetts Inst. of Tech., Cambridge, MA (United States)

Description

The defect structures and transport properties of Nd2-xCexCuO4-y for x = 0-0.20 are studied by dc electrical conductivity and thermoelectric power measurements for temperatures of 25-1,000C and PO2's of 1-10-4 atm. The conductivity of the undoped sample shows a typical n-type semiconductor behavior as confirmed by PO2 dependence and the sign of the thermoelectric power. Measurements obtained in a fixed-composition cooling experiment indicate that the mobility is not thermally activated. Ce doping progressively increases the absolute conductivity which reaches a maximum at x = 0.15. A defect model is proposed to explain these results

Additional details

Publishing Information

Publisher
American Ceramic Society Inc.
Imprint Place
Columbus, OH (United States)
Imprint Title
93rd Annual Meeting and Exposition. Abstracts
Imprint Pagination
476 p.
Journal Page Range
p. 69.

Conference

Title
93. annual meeting and exposition of the American Ceramic Society (ACerS).
Dates
28 Apr - 2 May 1991.
Place
Cincinnati, OH (United States).

Optional Information

Secondary number(s)
CONF-910430--.