On mechanism of reversed optical writing in TeOx layers with Ge(Sn) addition

An evaluation was given of crystallization time of amorphous tellurium. The character of interaction of the Ge(Sn)-O-Te system component was studied. It was shown that the mechanism of reversed optical writing in films obtained by coevaporation of tellurium, germanium (tin) and tellurium dioxide was in reversible photocrystallization of tellurium impurities in matrix of tellurium dioxide. In this case amorphous state of tellurium was stabillized by germanium or tin additions