Second phase inclusions in silicon doped with samarium

An attempt is made to detect the second phase inclusions in the silicon monocrystals alloyed with samarium up to concentrations close to the solubility limit in the process of growing with a Czochralski method. The transition from the single crystal growing to polycrystalline observed at a high level of allying supposedly occurs due to the impurity film thickening. Such defects as columns and triangles could develop as a result of the impurity adsorption by the interfacial surface in the process of growing