X-ray characterization of lapped surfaces of Si and Ge single crystals at 33.17 keV

X-ray characterization of lapped surfaces of Si and Ge monochromator crystals was performed at 33.17 keV. From comparison of the integrated intensity and FWHM (full width at half-maximum) of those crystals versus the particle size of lapping abrasives, Si crystal lapped with abrasive of no. 3000 showed a very high reflectivity of 78 % and a reasonably narrow FWHM of 12.4 arcsec. This lapped crystal provides ten times the X-ray integrated intensity of the etched one and retains energy resolution of 33 eV (ΔE/E = 9.9 x 10-4), which meets the requirements for imaging in intravenous coronary angiography utilizing an enlarged monochromatic beam from an asymmetrical cur Si crystal surface. (author)