Published 1983 | Version v1
Miscellaneous

A study of microdefects in Sb-doped silicon-Czochralski

  • 1. Escola Federal de Engenharia de Itajuba, Minas Gerais (Brazil)
  • 2. Sao Paulo Univ. (Brazil). Inst. de Fisica

Description

Published in summary form only

Additional details

Additional titles

Original title (no language)
Anais da Escola Brasileira de Fisica de Semicondutores.

Publishing Information

Imprint Title
Proceedings of the Brazilian Workshop on Semiconductor Physics
Imprint Pagination
36 p.
Journal Page Range
p. 28.
Report number
INIS-BR--1156

Conference

Title
Brazilian Workshop on Semiconductor Physics.
Dates
1-3 Feb 1983.
Place
Campinas, SP (Brazil).

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
19069942
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ANTIMONY; CRYSTAL DEFECTS; CRYSTAL DOPING; CZOCHRALSKI METHOD; SILICON; SOLID CLUSTERS; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; METALS; SCATTERING; SEMIMETALS

Optional Information

Notes
Imprint:Anais da Escola Brasileira de Fisica de Semicondutores.