Magnetic depth profile in GaMnAs layers with vertically graded Mn concentrations

Controlled vertical grading of magnetization of the ferromagnetic semiconductor GaMnAs represents a significant step toward optimizing its magnetic properties for device applications. Quantitative control of such grading is difficult due to various competing effects, such as Mn diffusion, self-annealing, and diffusion of charge carriers. Furthermore, there are also several surface effects that can influence the magnetization profile, which should be considered in designing and fabricating graded GaMnAs specimens. However, we show that vertical magnetization gradients in GaMnAs layers can be readily achieved by appropriate growth strategies. In this paper we describe the preparation, magnetization measurements, and polarized neutron reflectometry studies of vertically graded GaMnAs layers, which provide direct evidence that vertical grading of Mn concentration has been successfully achieved in our GaMnAs samples. Our measurements also indicate that these graded samples exhibit magnetic "hardening" near the surface. - Highlights: • Controlled vertical grading of the magnetization ferromagnetic semiconductors represents a significant step toward optimizing its magnetic properties for device applications. • Quantitative control of such grading is difficult due to various competing effects, such as Mn diffusion, self-annealing, and diffusion of charge carriers. • We show (via SQUID and Polarized Neutron Scattering) that vertical magnetization gradients in GaMnAs layers can be readily achieved by appropriate MBE growth strategies. • Our measurements also indicate that these graded samples exhibit magnetic "hardening" near the surface