Published November 2004
| Version v1
Journal article
Surface charge compensation for a highly charged ion emission microscope
- 1. Lawrence Livermore National Laboratory, L 472, Livermore, California 94550 (United States)
- 2. E.O. Lawrence Berkeley National Laboratory (United States)
Description
A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the time-of-flight (T-O-F) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun-enhanced HCI microscope are discussed
Additional details
Identifiers
- DOI
- 10.1016/j.ultramic.2004.06.008;
- PII
- S0304-3991(04)00144-5;
Publishing Information
- Journal Title
- Ultramicroscopy (Amsterdam)
- Journal Volume
- 101
- Journal Issue
- 2-4
- Journal Page Range
- p. 225-229
- ISSN
- 0304-3991
- CODEN
- ULTRD6
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37036544
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRONS; ION EMISSION; ION MICROPROBE ANALYSIS; IONS; LAWRENCE LIVERMORE NATIONAL LABORATORY; MASS RESOLUTION; MASS SPECTROSCOPY; MICROSCOPES; MICROSCOPY; SEMICONDUCTOR MATERIALS; SURFACES; TIME-OF-FLIGHT METHOD
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL ANALYSIS; ELEMENTARY PARTICLES; EMISSION; FERMIONS; LEPTONS; MATERIALS; MICROANALYSIS; NATIONAL ORGANIZATIONS; NONDESTRUCTIVE ANALYSIS; RESOLUTION; SPECTROSCOPY; US DOE; US ORGANIZATIONS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.