Published February 12, 1991 | Version v1
Journal article

Electroluminescence of thin film MDSDM structures with fluorine contained and oxide dielectrics

Description

Results of investigation into electroluminescence of thin-film MDSDM structures with fluorine-containing and oxide dielectrics including ITO-(Sc,Nd)F3-ZnS: SmF3-(Sc,Nd)F3-Al are presented. It is shown that application of fluorine-containing dielectrics allows one to obtain the dielectric -ZnS boundary with deeper levels as compared to oxide dielectric -ZnS boundary which facilitates electroluminescence efficiency increase

Additional details

Additional titles

Original title (Russian)
Электролюминесценция тонкопленочных MDPDM структур с фторсодержащими и оксидными диэлектриками

Publishing Information

Journal Title
Pis'ma v Zhurnal Tekhnicheskoj Fiziki
Journal Volume
17
Journal Issue
3
Series
Pis'ma Zh. Tekh. Fiz.
Journal Page Range
50-53
ISSN
0320-0116
CODEN
PZTFD