Published February 1997
| Version v1
Journal article
Angular dependence of the electronic energy loss of 800-keV He ions along the Si left-angle 100 right-angle direction
- 1. Instituto de Fisica da Universidade Federal do Rio Grande do Sul, Avenida Bento Goncalves 9500, 91501-970, Porto Alegre (Brazil)
- 2. Bereich F, Hahn-Meitner-Institut Berlin, Glienicker Strasse 100, D-14109 Berlin (Germany)
Description
We present measurements of the stopping power of 800-keV 4He ions channeled along the Si left-angle 100 right-angle axis, as a function of the incidence angle. We compare the experimental results with theoretical calculations by using the impact-parameter-dependent energy loss obtained from the solution of the time-dependent Schroedinger equation through the coupled-channel method. This nonperturbative calculation provides reliable energy-loss results which are in good agreement with the experimental results. copyright 1997 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 55
- Journal Issue
- 7
- Journal Page Range
- p. 4332-4342.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28040367
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTALS; ENERGY LOSSES; HELIUM IONS; HELIUM 4 BEAMS; ION CHANNELING; ION-ATOM COLLISIONS; SCHROEDINGER EQUATION; SILICON; STOPPING POWER
- Descriptors DEC
- ATOM COLLISIONS; BEAMS; CHANNELING; CHARGED PARTICLES; COLLISIONS; DIFFERENTIAL EQUATIONS; ELEMENTS; EQUATIONS; ION BEAMS; ION COLLISIONS; IONS; PARTIAL DIFFERENTIAL EQUATIONS; SEMIMETALS; WAVE EQUATIONS