Published 1996 | Version v1
Miscellaneous Metadata-only

Effect of doping on Ga1-xAlxAs structural properties

Creators

  • 1. Polska Akademia Nauk, Warsaw (Poland). Inst. Fizyki
  • 2. Polska Akademia Nauk, Warsaw (Poland)
  • 3. Instytut Technologii Elektronowej, Warsaw (Poland)
  • 4. ESRF, Grenoble (France)

Description

Short communication

Part of:
Abstracts of 3. International School and Symposium on Synchrotron Radiation in Natural Science

Additional details

Additional titles

Augmented title (English)
synchrotron application

Publishing Information

Publisher
Polish Synchrotron Radiation Society.
Imprint Title
Abstracts of 3. International School and Symposium on Synchrotron Radiation in Natural Science
Imprint Pagination
104 p.
Journal Page Range
p. 73.

Conference

Title
3. International School and Symposium on Synchrotron Radiation in Natural Science.
Dates
31 May - 8 Jun 1996.
Place
Jaszowiec (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28066920
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
ALUMINIUM ADDITIONS; CRYSTAL DOPING; CRYSTAL STRUCTURE; DOPED MATERIALS; GALLIUM ARSENIDES; MEETINGS; SYNCHROTRON RADIATION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BREMSSTRAHLUNG; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; MATERIALS; PNICTIDES; RADIATIONS

Optional Information