Published December 17, 2002 | Version v1
Journal article

Preparation of crystalline Si1-xGex thin films by pulsed ion-beam evaporation

  • 1. Extreme Energy-Density Research Institute, Nagaoka University of Technology, Nagaoka 940-2188 (Japan)
  • 2. Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

Description

Thin films of single phase, polycrystalline silicon germanium (Si1-xGex) were prepared by ion-beam evaporation (IBE) using Si-Ge multi-phase targets. After the irradiation of the targets by an pulsed light ion beam with peak energy of 1 MV, 450 and 480 nm thick films were deposited on Si single crystal and quartz glass substrates, respectively. From XRD analysis, the thin films consisted of a single phase Si1-xGex, whose composition is close to those of the targets

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
650
Journal Issue
1
Journal Page Range
p. 417-420
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
14. international conference on high-power particle beams
Acronym
BEAMS 2002
Dates
23-28 Jun 2002
Place
Albuquerque, NM (United States)

Optional Information

Notes
(c) 2002 American Institute of Physics