Application and further development of ion implantation for very large scale integration. Pt. 1

The manufacture of highly-complex integrated circuits requires increased precision and better process stability, which means that more subtle processes have to be developed and conventional techniques have to be optimized. In this research project, detailed investigations were made regarding the suitability of ion implantation for the purpose of silicon doping from the viewpoint of the smallest possible structure size, and also regarding new, mostly non-doping implantation applications. The most important results of this research project were the improvement or development of one-dimensional as well as two-dimensional process-simulation programs, the development of a new technique for local oxidation using nitrogen implantation, and the etching of tapered oxide windows using ion-implantation-produced radiation damage. By means of high-energy implantation, it was possible to produce buried isolating and conducting layers having good electrical properties. Other aspects of this study were concerning with the influencing of the oxidation rate by means of implantation, and with radiation-enhanced diffusion. (orig.)