Study of radiation-induced defects in neutron-irradiated silicon

Variations of electrophysical parameters of neutron-irradiated silicon are compared with the properties of structure defects detected by the internal friction (IF) method. In the course of isochronous annealing of crystals irradiated by PHI=1014-1015 cm-2 doses the type of conductivity changes many times. The hole concentration grows with annealing in the 400-440 and 700-770 K ranges whereas the electron concentration grows at 600 and 900 K. Four IF peaks (PHI=1017-1018 cm-2) are observed at 410, 470, 540 and 620 K. The frequency factor of defect reorientation is approximately 1013 s-1. The activation energy of reorientation and defect annealing temperatures are as follows: A - 0.72+-0.05 eV, 430 K; B - 0.80+-0.05 eV, 500 K; C - 0.90+-0.05 eV, 600 K; D-1.3+-0.2 eV, 750 K. A conclusion is drawn that the peak is caused by reorientation of the intrinsic interstitial silicon atom, the D peak is due to oxygen-containing defects