Published December 2013 | Version v1
Journal article Metadata-only

Technology of manufacturing micropixel avalanche photodiodes and a compact matrix on their basis

Creators

  • 1. Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Republic of (Azerbaijan)
  • 2. Joint Institute for Nuclear Research, Dubna, Moscow oblast (Russian Federation)
  • 3. Zecotek Photonics Pte, Ltd., Singapore (Singapore)
  • 4. Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, Republic of (Azerbaijan)

Description

A technology for manufacturing a new micropixel avalanche photodiode (MAPD) with deeply buried pixels (including two epitaxial layers between which an array of n+) regions is formed by ionic doping) is described. A new method for manufacturing the compact MAPD matrices with minimum dead zone is proposed.

Availability note (English)

Available from http://link.springer.com/openurl/pdf?id=doi:10.1134/S154747711401018X

Additional details

Identifiers

URL
http://link.springer.com/openurl/pdf?id=doi:10.1134/S154747711401018X;
DOI
10.1134/S154747711401018X;

Publishing Information

Journal Title
Physics of Particles and Nuclei Letters (Print)
Journal Volume
10
Journal Issue
7
Journal Page Range
p. 780-782
ISSN
1547-4771

INIS

Country of Publication
Russian Federation
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52085635
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BASES; EPITAXY; LAYERS; MANUFACTURING; MATRICES; NITROGEN IONS; PHOTODIODES; ZONES
Descriptors DEC
CHARGED PARTICLES; CRYSTAL GROWTH METHODS; IONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Copyright
Copyright (c) 2013 Pleiades Publishing, Ltd.